Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT). The advantages of the conduction voltage drop are that the IGBT drive power is small and the saturation voltage is reduced. It is very suitable for use in converter systems with a DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.
Market Analysis and Insights: Global IGBT Discretes Market
Due to the COVID-19 pandemic, the global IGBT Discretes market size is estimated to be worth US$ million in 2022 and is forecast to a readjusted size of US$ million by 2028 with a CAGR of % during the forecast period 2022-2028. Fully considering the economic change by this health crisis, LV IGBT accounting for % of the IGBT Discretes global market in 2021, is projected to value US$ million by 2028, growing at a revised % CAGR from 2022 to 2028. While EV segment is altered to an % CAGR throughout this forecast period.
China IGBT Discretes market size is valued at US$ million in 2021, while the US and Europe IGBT Discretes are US$ million and US$ million, severally. The proportion of the US is % in 2021, while China and Europe are % and % respectively, and it is predicted that China proportion will reach % in 2028, trailing a CAGR of % through the analysis period 2022-2028. Japan, South Korea, and Southeast Asia are noteworthy markets in Asia, with CAGR %, %, and % respectively for the next 6-year period. As for the Europe IGBT Discretes landscape, Germany is projected to reach US$ million by 2028 trailing a CAGR of % over the forecast period 2022-2028.
The global key manufacturers of IGBT Discretes include Sanken Electric, CR Micro, Fuji Electric, China Zhenhua Group Science & Technology Co Ltd, Infineon Technologies, Mitsubishi Electric, StarPower Semiconductor, STMicroelectronics and BYD Microelectronics, etc. In 2021, the global top five players have a share approximately % in terms of revenue.
In terms of production side, this report researches the IGBT Discretes capacity, production, growth rate, market share by manufacturers and by region (region level and country level), from 2017 to 2022, and forecast to 2028.
In terms of sales side, this report focuses on the sales of IGBT Discretes by region (region level and country level), by company, by Type and by Application. from 2017 to 2022 and forecast to 2028.
Global IGBT Discretes Scope and Segment
IGBT Discretes market is segmented by Type and by Application. Players, stakeholders, and other participants in the global IGBT Discretes market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
LV IGBT
MV IGBT
HV IGBT
Segment by Application
EV
High-speed Railway
Photovoltaic
Wind Power
Home Appliances
Others
By Company
Sanken Electric
CR Micro
Fuji Electric
China Zhenhua Group Science & Technology Co Ltd
Infineon Technologies
Mitsubishi Electric
StarPower Semiconductor
STMicroelectronics
BYD Microelectronics
CRRC Times Elec
Keda Semiconductor
Silan
Semikron
Danfoss
ABB
ON Semiconductor
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
U.A.E